GaN Epitaxy R&D Engineer

With offices in Irvine, CA and Sunnyvale, CA, and HQ in China, we are a leading semiconductor manufacturer that specializes in the large-scale production of high-quality, compound semiconductor chips and devices. We believe that semiconductors are the cornerstone of the modern industry and are committed to being a world-class manufacturing and service platform of compound semiconductors. We continue to grow and expand, and are looking for GaN Epitaxy R&D Engineers to join our team at our China HQ in Xiamen.

Are you an R&D Engineer with GaN Epitaxy experience and willing to relocate to China? Please keep reading...

What we offer:

• Competitive salary
• Comprehensive benefits package
• PTO, sick time, vacation
• 401k
• Relocation Package
• Join a growing, reputable, global semiconductor manufacturing company

Is your background a fit? Please apply if you meet the following criteria:

Qualifications:

• This role requires 80% travel/stay in China
• Master degree or PhD in Physics, Materials Science, EE, ChemE, Chemistry or related areas
• More than 3 years of experience working on GaN related MOCVD Epitaxial process development
• Strong hands-on knowledge/understanding of III-V MOCVD Epitaxial growth equipment and impact to process
• Knowledge of GaN HEMT Device physics and Epitaxial growth process impact to device performance and reliability
• Strong knowledge of GaN material characterization and metrology